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论文库 |
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| 论文编号: |
2013-2069 |
| 作者: |
Ren, Shengdong(1,2); Li, Bincheng(1); Huang, Qiuping(1,2) |
| 刊物名称: |
Journal of Applied Physics |
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| 论文题目英文: |
Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers |
| 年: |
2013 |
| 卷: |
114 |
| 期: |
24 |
| 页: |
243702 |
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