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论文编号: |
2013-2051 |
作者: |
Ren, Sheng-Dong(1,2); Li, Bin-Cheng(1); Gao, Li-Feng(1); Wang, Qian(1,2) |
刊物名称: |
Chinese Physics B |
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论文题目英文: |
Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers |
年: |
2013 |
卷: |
22 |
期: |
5 |
页: |
057202 |
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